tck111 g , tck 112g 2014- 02- 28 1 toshiba cmos linear integrated circuit silicon monolithic tck1 11 g , tck1 12g 3a, 8 m ultra low on resistance l o ad switch ic with reverse c urrent b locking and thermal shutdown function the tck1 11 g and tck1 12 g are l oad s witch ics for power management with r everse c urrent b locking and thermal shutdown function featuring ultra low switch on resistance, high output current and wide input voltage operation from 1.1 to 5.5 v. switch on resistance is only 8. 3 m? (typ.) at v in = 5.0 v, -1 . 5 a load condition s and output current is available on 3.0 a . a nd these feature a slew rate control driver and output auto - dischar ge function. this device is available in 0. 5 mm pitch ultra small package wcsp6 c ( 1.0 mm x 1. 5 mm, t: 0. 5 mm ( typ . )) .thus this devices is ideal for portable applications that require high - density board assembly such as cellular phone. feature ? l ow on resistance : r on = 8 . 3 m? ( typ . ) at v in = 5.0 v, - 1.5 a r on = 8. 4 m? ( typ . ) at v in = 3.3 v, - 1.5 a r on = 8. 4 m? ( typ . ) at v in = 1.8 v, - 1.5 a r on = 8.5 m? (ty p . ) at v in = 1. 1 v, - 1.5 a ? wide input voltage operation: v in = 1.1 to 5.5 v ? reverse current blocking ? inrush current reducing circuit ? thermal shutdown function ? output a uto - discharge ( tck112g ) ? pull down connection between control and gnd ? ultra small package : wcsp6 c ( 1.0 mm x 1. 5 mm, t: 0. 5 mm( typ. )) wcsp 6c weight : 1.4 m g ( typ. )
tck111 g , tck 112g 2014- 02- 28 2 absolute maximum ratings (ta = 25c) characteristics symbol rating unit input voltage v in - 0.3 to 6.0 v control voltage v ct - 0.3 to 6.0 v output voltage v out - 0.3 to 6.0 v output current i out dc 3.0 a pulse 4.0 (note 1) a power dissipation p d 1.2 (note 2) w operating temperature range t opr ?40 to 85 c junction temperature tj 150 c storage temperature t stg ?55 to 150 c note : using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges . please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (handling precautions/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: 100 s pulse, 2% duty cycle note 2 : rating at mounting on a board ( board material: glass epoxy (fr4) board dimension: 25.4 mm x 25.4 mm ( both sides of board) t=1. 6 mm, cu pad area: 645mm 2 ) pin assignment(top view) t o p marking index a1: vout b1: vout c1: gnd a2: vin b2: vin c2: control 1 2 a b c lot trace code v: tCK111G w: tck112g
tck111 g , tck 112g 2014- 02- 28 3 block diagram function t able part number function reverse current blocking thermal s hutdown output auto - discharge control pin connection tck1 11 g bu ilt in bu ilt in n/a pull down tck1 12 g bu ilt in bu ilt in bu ilt in pull down operation logic table 1.1 v v in 5.5 v (ta = - 40 to 8 5c) tCK111G tck112g control high output q 1 on on discharge q 2 D off reverse current block active active control low output q 1 off off discharge q 2 D on reverse current block active active control open output q 1 off off discharge q 2 D on reverse current block active active thermal shut down control logic pull down v in v out gnd slew rate control driver output discharge (tck112g only) control reverse current blocking charge pump q 1 q 2
tck111 g , tck 112g 2014- 02- 28 4 electrical characteristics dc characteristics (ta = - 40 to 8 5c) characteristics symbol test condition ta = 25 c ta = ? 40 to 85 c unit min t yp. max min max input voltage v in D 1.1 D 5.5 1.1 5.5 v control high - level input voltage v ih 1.2v < v in 5.5 v 1.0 D D 1.0 D v 1.1v v in 1.2 v 0.9 D D 0.9 D control low - level input voltage v il v in = 1.1 to 5.5 v D D 0.4 D 0.4 v quiescent current ( on state) i q i out = 0 ma v in = v ct = 1.1 v D 55 D D D a v in = v ct = 1.8 v D 50 D D D a v in = v ct = 3.3 v D 48 D D D a v in = v ct = 5.0 v D 69 D D 106 a standby current ( off state) i q(off) v in = 5.5 v, v ct = 0 v, v out = open (note 3) D 0.5 D D 1.4 a reverse blocking current i r b v out = 5.0 v, v in = 0 v, v ct = 0 v D 0.6 D D 10 a reverse blocking voltage threshold v rb v out C v in D 40 D D D mv reverse blocking release voltage threshold v rbr v out C v in D - 30 D D D mv on resistance r on i out = - 1.5 a v in = 5.0 v D 8.3 D D 15 m v in = 3.3 v D 8.4 D D D v in = 1.8 v D 8.4 D D D v in = 1.1 v D 8.5 D D 15 output d ischarge on resistance r sd D (tck112g) D 380 D D D note 3 h except off - state switch current ( i sd (off) : v in = 5.5 v, v ct = 0 v, v out = gnd ). ac characteristics (ta = 2 5c) characteristics symbol test condition(figure 1) min t yp. max unit v out rise time t r v in = 5.0 v , r l = 2.5 , c l =1 .0 f D 0.5 D ms v out fall time t f v in = 5.0 v , r l = 2.5 , c l =1 .0 f D 5 D s turn on delay t on v in = 5.0 v , r l = 2.5 , c l =1 .0 f D 0.2 D ms turn off delay t off v in = 5.0 v , r l = 2.5 , c l =1 .0 f D 4 D s ac waveform figure 1 t r , t f, t on, t off waveforms v ih v out v ct v ol v oh v il 90% t on t off 50% 50% 10% t r t f v out 10% 90% 90% 10%
tck111 g , tck 112g 2014- 02- 28 5 application not e 1. application circuit example (top view) the figure below shows the recommended configuration for tCK111G and tck112g. 1) i nput and output capacitor an input capacitor (c in ) and an output capacitor ( c out ) are necessary for the stable operation of tck 111 g and tck1 1 2g. and it is effective to reduce voltage overshoot or undershoot due to sharp changes in output current and also for improve d stability of the power supply. when used, place c in and c out more than 1.0 f as close to v in pin to improve stability of the power supply . 2 ) control pin a control pins for tck1 1 1g and tck1 1 2g are both active high, which controls both the pass - through n - ch mosfet and the discharge n - ch mosfet (only for tck1 12 g), operated by the control voltage and schmitt trigger. w hen the control voltage level is high, output n - ch mosfet is on state and discharge n - ch mosfet is off state. w hen control voltage level is low, and the state of the mosfets is reversed. also, pull down resistance equivalent to a few m is connected between control and gnd, thus the load switch ic is in off state even when cont rol pin is open. i n addition, control pin has a tolerant function such that it can be used even if the control voltage is higher than the input voltage. 2. reverse current blocking reverse current blocking function is designed in these products. this fun ction is active regardless output n - ch mosfet on/off state in condition that v in is supplied however these does not assure for the suppression of uprising device operation. in use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our semiconductor reliability handbook . then use these products under absolute maximum ratings in any condition. furthermore, toshiba recommend inserting failsafe system into the design. 3. thermal shut down function thermal shutdown function is designed in these products, but these does not assure for the suppression of upr ising device operation. in use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our semiconductor reliability handbook . then use these products under absolute maximum ratings in any condition. furthermore, toshiba recommend inserting failsafe system into the design. v out gnd v in control c l r l load c in 1.0 f c out 1.0 f
tck111 g , tck 112g 2014- 02- 28 6 4. power dissipation b oard- mounted power dissipation ratings for tc k111g and tck112g are available in the absolute maximum ratings table. power dissipation is measured on the board condition shown below. [the board condition] board material: glass epoxy (fr4) board dimension: 25.4 mm x 25.4 mm ( both sides of board) t =1. 6 mm, cu pad area: 645mm 2 ple ase allow sufficient margin when designing a board pattern to fit the expected power dissipation. also take into consideration the ambient temperature, input voltage, output current etc . and applying the appropriate derating for allowable power dissipation during operation. ? 4 0 ambient temperature ta ( c ) p d C ta ( wcsp6c ) power dissipation p d (mw) 0 0 40 1 2 0 8 0 4 00 8 00 12 00 16 00
tck111 g , tck 112g 2014- 02- 28 7 representative typical characteristics 1) o n resistance 2) quiescent current on resistance r on (m ) 7 0 1.5 3.0 output current i out ( a ) 0.5 1 .0 2.0 2 . 5 8 9 1 0 11 12 r on - i out v in = 1.1 v ta = 25 c quiescent current (on) i q ( a) i out = 0 ma ta = 2 5 c 90 180 0 1 4 6 2 3 5 input voltage v in (v) 0 30 60 120 150 i q (on) - v in on resistance r on (m ) 7 0 3.0 5.5 input voltage v in ( v ) 1.0 2.0 4.0 5.0 i out = - 1.5a ta = 25 c 8 9 1 0 11 12 r on - v in
tck111 g , tck 112g 2014- 02- 28 8 package dimension wcsp6 c weight : 1.4 m g ( typ . ) unit: mm
tck111 g , tck 112g 2014- 02- 28 9 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collectively "toshiba"), reserve the right to make changes to the i nformation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduced without prior written permission from toshiba. even with toshiba's written permission, reproduction is permissi ble only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for providing adequ ate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of product could cause loss of human life, bodily injury or damage to property, including data loss or corruption . before customers use the product, create designs including the product, or incorporate the product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without li mitation, this document, the specifications, the data sheets and application notes for product and the precautions and conditions set forth in the "toshiba semiconductor reliability handbook" and (b) the instruct ions for the application with which the prod uct will be used with or for. customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such d esign or applications; (b) eval uating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parame ters for such desig ns and applications. toshiba assumes no liability for customers' product design or applications. ? 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